maximum ratings all ratings per die: t c = 25c unless otherwise speci ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. static electrical characteristics ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated ? popular to-247 or surface mount d 3 package. super junction mosfet c power semiconductors o o l mos "coolmos? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag." g d s microsemi website - http://www.microsemi.com APT53N60BC6 apt53n60sc6 600v 53a 0.070 symbol parameter apt53n60b_sc6 unit v dss drain-source voltage 600 volts i d continuous drain current @ t c = 25c 53 amps continuous drain current @ t c = 100c 34 i dm pulsed drain current 1 159 v gs gate-source voltage continuous 20 volts p d total power dissipation @ t c = 25c 417 watts t j ,t stg operating and storage junction temperature range - 55 to 150 c t l lead temperature: 0.063" from case for 10 sec. 260 i ar avalanche current 2 9.3 amps e ar repetitive avalanche energy 2 ( id =9.3a, vdd = 50v ) 1.72 mj e as single pulse avalanche energy ( id = 9.3a, vdd = 50v ) 1135 symbol characteristic / test conditions min typ max unit bv (dss) drain-source breakdown voltage (v gs = 0v, i d = 250 a) 600 volts r ds(on) drain-source on-state resistance 3 (v gs = 10v, i d = 25.8a) 0.070 ohms i dss zero gate voltage drain current (v ds = 600v, v gs = 0v) 25 a zero gate voltage drain current (v ds = 600v, v gs = 0v, t c = 150c) 250 i gss gate-source leakage current (v gs = 20v, v ds = 0v) 100 na v gs(th) gate threshold voltage (v ds = v gs , i d = 1.72ma) 2.5 3 3.5 volts to-247 d 3 pak 050-7206 rev b 8-2010
dynamic characteristics apt53n60b_sc6 source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. 3 pulse test: pulse width < 380 s, duty cycle < 2% microsemi reserves the right to change, without notice, the speci cations and information contained herein. 4 see mil-std-750 method 3471 5 eon includes diode reverse recovery. 6 maximum 125c diode commutation speed = di/dt 600a/ s 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 10 -5 10 -4 10 -3 10 -2 0.1 1 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1 mhz 4020 pf c oss output capacitance 3545 c rss reverse transfer capacitance 330 q g total gate charge 4 v gs = 10v v dd = 300v i d = 53a @ 25c 154 nc q gs gate-source charge 26 q gd gate-drain ("miller ") charge 82 t d(on) turn-on delay time inductive switching v gs = 15v v dd = 400v i d = 53a @ 125c r g = 4.3 14 ns t r rise time 36 t d(off) turn-off delay time 151 t f fall time 74 e on turn-on switching energy 5 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 53a, r g = 4.3 960 j e off turn-off switching energy 873 e on turn-on switching energy 5 inductive switching @ 125c v dd = 400v, v gs = 15v i d = 53a, r g = 4.3 1478 e off turn-off switching energy 995 symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 46 amps i sm pulsed source current 1 (body diode) 159 v sd diode forward voltage 3 (v gs = 0v, i s = -53a) 0.9 1.2 volts dv / dt peak diode recovery dv / dt 6 15 v/ns t rr reverse recovery time (i s = -53a, di / dt = 100a/ s) t j = 25c 795 ns q rr reverse recovery charge (i s = -53a, di / dt = 100a/ s) t j = 25c 25 c i rrm peak recovery current (i s = -53a, di / dt = 100a/ s) t j = 25c 58 amps symbol characteristic min typ max unit r jc junction to case 0.30 c/w r ja junction to ambient 40 050-7206 rev b 8-2010
050-7206 rev b 8-2010 typical performance curves apt53n60b_sc6 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 0 50 100 150 0.90 0.95 1.00 1.05 1.10 1.15 1.20 - 50 - 25 0 25 50 75 100 125 150 0 0.50 1.00 1.50 2.00 2.50 3.00 0 30 60 90 120 150 0 10 20 30 40 50 60 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 15v v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0 0.50 1.00 1.50 2.00 2.50 -50 0 50 100 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) 4.5v 5.5v 5v v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 26.5a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 0.1 1 10 100 1000 1 10 100 800 1ms 100s 100ms 10ms 6.0v 6.5v 7.0v 10v r ds(on) , drain-to-source on resistance
050-7206 rev b 8-2010 typical performance curves apt53n60b_sc6 1000 1500 2000 2500 3000 3500 0 10 20 30 40 50 0 20 40 60 80 00 20 10 20 30 40 50 60 70 80 90 1 10 100 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 25 50 75 100 125 150 175 200 10 20 30 40 50 60 70 80 90 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180 200 0 10 100 1000 10,000 12,000 0 100 200 300 400 500 600 c iss t j = =25c v ds = 480v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 300v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 350 700 1050 1400 1750 2100 2450 2800 3150 3500 10 20 30 40 50 60 70 80 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 53a v dd = 400v r g = 4.3 t j = 125c l = 100 h t d(on) t d(off) v dd = 400v r g = 4.3 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 400v r g = 4.3 t j = 125c l = 100 h t r t f e on e off v dd = 400v i d = 53a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 120v
figure 17, turn-on switching waveforms and de nitions figure 18, turn-off switching waveforms and de nitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% 050-7206 rev b 8-2010 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. typical performance curves apt53n60b_sc6 d 3 pak package outline to-247 (b) package outline e3 100% sn plated 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 apt30dq60
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